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題目作者分類號關鍵字作者單位刊名語言出版時間
Executive Chairman and General Secretary's Report to Annual General Meeting, 2008/9 Paul Bottomley;Alan Hey;TQ175.7The Refractories Engineer英文2009-01-05
CERAM Provides Guidelines TQ175.7The Refractories Engineer英文2009-01-05
Taking our Institute Forward after the Challenges of the Global Recession Trevor Staton;TQ175.7The Refractories Engineer英文2009-01-05
Reclaimed Raw Material Resources Tony Hutton;TQ175.7The Refractories Engineer英文2009-01-05
Special Refractories Solutions TQ175.7The Refractories Engineer英文2009-01-05
First Order for New Maintenance Workshop in China TQ175.7The Refractories Engineer英文2009-01-05
Development of Tundish Dry Vibe Technology TQ175.7The Refractories Engineer英文2009-01-05
Large-Scale Synthesis of Few-Layered Graphene using CVD Tian, R;Yu, ZY;Xiang, D;Cheng, J;Wang, XB;You, HJ;Liu, FM;Li, MJ;Wan, L;Li, SQ;Li, Q;Xu, Y;TQ175Few-layered graphene;Nanostructures;Hubei Univ, Fac Mat Sci & Engn, Wuhan 430062, Peoples R China.;Hubei Univ, Fac Mat Sci & Engn, Wuhan 430062, Peoples R China.;Hubei Univ, Fac Mat Sci & Engn, Wuhan 430062, Peoples R China.;Cent China Normal Univ, Coll Chem, Key Lab Pesticide & Chem Biol EChemical vapor deposition英文2009-01-05
Growth Mechanism and Chemical Structure of Amorphous Hydrogenated Silicon Carbide (a-SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 1 Wrobel, AM;Walkiewicz-Pietrzykowska, A;Ahola, M;Vayrynen, IJ;Ferrer-Fernandez, FJ;Gonzalez-Elipe, AR;TQ175film composition;film structure;RHP-CVD;silicon carbide film;triethylsilane precursors;Polish Acad Sci, Ctr Mol & Macromol Studies, PL-90363 Lodz, Poland.;Polish Acad Sci, Ctr Mol & Macromol Studies, PL-90363 Lodz, Poland.;Univ Turku, Dept Phys, FIN-20014 Turku, Finland.;Univ Turku, Dept Phys, FIN-20014 Turku, Finland.;Ctr Nacl AceleradoresChemical vapor deposition英文2009-01-05
The Aerosol-Assisted CVD of Silver Films from Single-Source Precursors Panneerselvam, A;Malik, MA;O'Brien, P;Helliwell, M;TQ175AACVD;Silver;Thin films;Single-source precursors;Temperature gradient;Univ Manchester, Sch Chem, Manchester M13 9PL, Lancs, England.;Univ Manchester, Sch Chem, Manchester M13 9PL, Lancs, England.;Univ Manchester, Sch Chem, Manchester M13 9PL, Lancs, England.;Univ Manchester, Sch Chem, Manchester M13 9PL, Lancs, England.Chemical vapor deposition英文2009-01-05

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