作者：Park, KT;Um, HD;Jee, SW;Jung, JY;Park, YC;Yang, JM;Lee, JH;
作者單位：Hanyang Univ, Dept Chem Engn, Ansan 426791, South Korea.;Hanyang Univ, Dept Chem Engn, Ansan 426791, South Korea.;Hanyang Univ, Dept Chem Engn, Ansan 426791, South Korea.;Hanyang Univ, Dept Chem Engn, Ansan 426791, South Korea.;Natl Nanofab Ctr, Measureme
刊名：Chemical vapor deposition
ISSN：0948-1907
出版年：2008-01-05
卷：14
期：41225
起頁：331
止頁：333
分類號：TQ175
語種：英文
關鍵詞：QUANTUM DOTS;VISIBLE PHOTOLUMINESCENCE;IMPLANTED SIO2-FILMS;GE NANOWIRES;NANOCRYSTALS;OXIDATION;GERMANIUM;EMISSION;RAMAN;
內容簡介Freestanding Ge/SiO2 core/shell nanoparticles were synthesized via metastable SiO2 hollow nanospheres by atmospheric-pressure thermal chemical Vapor deposition (APCVD) using SiCl4 and GeCl4 source gases. The Ge-core and. SiO2-shell thicknesses could be controlled by adjusting the annealing time and the source gas ratio. These-nanoparticles might be useful as labeling markers for fluorescent applications.
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