作者：Munnik, F;Leskela, M;Ritala, M;Pilvi, T;Puukilainen, E;
作者單位：Inst Ion Beam Phys & Mat Res, Forschungszentrum Dresden Rossendorf, D-01314 Dresden, Germany.;Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland.;Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland.;Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finla
刊名：Chemical vapor deposition
ISSN：0948-1907
出版年：2009-01-05
卷：15
期：40911
起頁：27
止頁：32
分類號：TQ175
語種：英文
關鍵詞：ALD;Optical materials;Thin films;YF3;
內容簡介Yttrium fluoride (YF3) is a dielectric material with good light transmittance between the ultraviolet (UV) and infrared (IR) range of wavelengths. In this paper we introduce the first use of the atomic layer deposition (ALD) of YF3 thin films. The films are grown at 175-325 degrees C. Y(thd)(3) (thd = 2,2,6,6-tetramethyl-3,5-heptanedionato) is used as a cation source and TiF4 as a fluorine precursor. YF3 film growth characteristics, together with structural, optical, and electrical properties, are studied. Various methods, such as spectrophotornetry, X-ray diffractometry (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and elastic recoil detection analysis (ERDA) are applied to characterize the films. Electrical properties are analyzed from Al/YF3/indium-tin-oxide capacitor structures at room temperature. The growth rates of the films are between 1.1 and 1.7 angstrom per cycle. The films grown below 225 degrees C are amorphous, otherwise they are polycrystalline. The impurities detected in the YF3 film are H, C, O, and Ti. The amount of all of these tends to decrease with increasing deposition temperature, and is only 3.0 at.-% at 325 degrees C. Permittivities of the films are around 6. The refractive indices are 1.51-1.59 (at lambda = 580 nm), and high light transmittance is achieved from the UV to IR regions with the sample grown at 300 degrees C.
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