作者：Walkiewicz-Pietrzykowska, A;Wrobel, AM;Glebocki, B;
作者單位：Polish Acad Sci, Ctr Mol & Macromol Studies, PL-90363 Lodz, Poland.;Polish Acad Sci, Ctr Mol & Macromol Studies, PL-90363 Lodz, Poland.;Polish Acad Sci, Ctr Mol & Macromol Studies, PL-90363 Lodz, Poland.
刊名：Chemical vapor deposition
ISSN：0948-1907
出版年：2009-01-05
卷：15
期：40911
起頁：47
止頁：52
分類號(hào)：TQ175
語種：英文
關(guān)鍵詞：amorphous materials;density;hydrogenated silicon carbide films;mechanical properties;refractive index;surface morphology;
內(nèi)容簡(jiǎn)介The surface morphology and physical (density), optical (refractive index), and mechanical (hardness, elasticity) properties of amorphous hydrogenated silicon carbide (a-SiC:H) films produced by remote microwave hydrogen plasma (RHP)CVD from a triethylsilane precursor are investigated. The effect of substrate temperature (varied in the range T-s=30-400 degrees C) on the properties of a-SiC:H films is reported. In view of the atomic force microscopy (AFM) examination the films were found to be morphologically homogeneous materials exhibiting small surface roughness which varies with T-s in a narrow range of values (1.0-1.5 nm). The relationships between the film compositional parameter, expressed by the atomic concentration ratio Si/C, and structural parameter described by the relative integrated intensities of the absorption IR band from the Si-C bonds (controlled by substrate temperature) are examined. On the basis of the results of these examinations, reasonable compositional and structural dependencies of film properties are determined. The properties of investigated a-SiC:H films are compared with those reported in the literature for films produced from various organosilicon precursors by different CVD techniques. Due to their good mechanical properties a-SiC:H films produced in a high Substrate temperature regime (T-s = 300-400 degrees C) seem to be useful as protective coatings improving the surface mechanics of various engineering materials.
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