作者：Gillian A. Zaharias;Stacey F. Bent;
作者單位：Dept. of Chemical Engineering, Stanford University Stanford, CA 94305-5025 (USA);Dept. of Chemical Engineering, Stanford University Stanford, CA 94305-5025 (USA)
刊名：Chemical vapor deposition
ISSN：0948-1907
出版年：2009-01-05
卷：15
期：41005
起頁(yè)：133
止頁(yè)：141
分類(lèi)號(hào)：TQ175
語(yǔ)種：英文
關(guān)鍵詞：Hot wire CVD;Infrared spectroscopy;Organic semiconductors;Polyaniline;
內(nèi)容簡(jiǎn)介We explore the use of hot-wire (HW) CVD as an alternative, solvent-free technique to produce compact films similar to conventional polyaniline. Film deposition and molecular bonding are studied as functions of Ta filament temperature, aniline pressure, and substrate temperature to allow an insight into the film growth mechanism, which is postulated to depend largely on reactions of aniline with H and C atoms generated at the hot wire. The process gas, aniline, is found to cause rapid formation of tantalum carbide and carbon deposits on the hot Ta surface. The accompanying change in film quality as the filament ages is studied.
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