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作者：Kuo, DH;Wu, WH;

作者單位：Natl Taiwan Univ Sci & Technol, Dept Polymer Engn, Taipei, Taiwan.;Natl Dong Hwa Univ, Dept Mat Sci & Engn, Shoufeng, Hualien, Taiwan.

刊名：Chemical vapor deposition

ISSN：0948-1907

出版年：2009-01-05

卷：15

期：40911

起頁(yè)：11

止頁(yè)：14

分類號(hào)：TQ175

語(yǔ)種：英文

關(guān)鍵詞：CHEMICAL-VAPOR-DEPOSITION;GALLIUM NITRIDE NANORODS;PHASE EPITAXY;NANOTUBES;DIODES;METAL;

內(nèi)容簡(jiǎn)介

Communication: We report the concept of an in-situ-formed subfluoride of GaF by reacting Ga and LiF for facilitating the growth of GaN nanowires with LiF-assisted CVD. HF gas and moisture-sensitive GaCl3 are not required for this process. The effects of LiF and growth temperature on the formation, crystal structure, and microstructure of the nanowires are investigated. The formation of GaN NWs via the vapor-liquid-solid growth mechanism involves the crystallization of ID GaN from GaN molecules passing through catalytic nanoparticles or the nitridation of precipitates from Au-Ga-Li alloy melts.