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作者：Adelmann, C.;Pierreux, D.;Swerts, J.;Dewulf, D.;Hardy, A.;Tielens, H.;Franquet, A.;Brijs, B.;Moussa, A.;Conard, T.;Van Bael, M.K.;Maes, J.W.;Jurczak, M.;Kittl, J.A..;Van Elshocht, S.;

作者單位：Kapeldreef 75, B-3001, Leuven, Belgium;Kapeldreef 75, B-3001, Leuven, Belgium;Kapeldreef 75, B-3001, Leuven, Belgium;Institute for Materials Research, Inorganic and Physical Chemistry, Hasselt University, B-3590, Diepenbeek, Belgium;Institute for Material

刊名：Chemical vapor deposition

ISSN：0948-1907

出版年：2010-01-05

卷：16

期：41005

起頁：170

止頁：178

分類號：TQ175

語種：英文

關鍵詞：ALD;Cyclopentadienyl;Gadolinium aluminate;Gadolinium oxide;High-k oxides;

內容簡介

For future generations of non-volatile memory applications, the replacement of the interpoly dielectric by a suitable high-k material is required. Rare-earth aluminates are potential candidates because they are predicted to combine a high dielectric permittivity with a large band gap. We demonstrate the atomic layer deposition (ALD) of Gd_xAl_(2-x)O3 layers using Gd(iPrCp)3, trimethyl-aluminum (TMA), and H_2O or O_3. Process windows for both H_2O and O_3 as oxidants are explored. H_2O is shown to lead to better GdxAl_(2-x)O3 film properties than O_3, although the accessible composition range is limited because of the hygroscopic nature of Gd_2O_3.