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A New Method for the Growth of Zinc Oxide Nanowires by MOCVD using Oxygen-Donor Adducts of Dimethylzinc

作者:Kate Black;Paul R. Chalker;Anthony C. Jones;Peter J. King;John L. Roberts;Peter N. Heys;

作者單位:Department of Chemistry, University of Liverpool Liverpool, Merseyside, L69 7ZD (UK);Department of Chemistry, University of Liverpool Liverpool, Merseyside, L69 7ZD (UK);Department of Chemistry, University of Liverpool Liverpool, Merseyside, L69 7ZD (UK);

刊名:Chemical vapor deposition

ISSN:0948-1907

出版年:2010-01-05

卷:16

期:40911

起頁:106

止頁:111

分類號:TQ175

語種:英文

關鍵詞:dimethylzinc adducts;liquid injection MOCVD;ZnO nanowires;

內容簡介

The oxygen donor adducts of dimethylzinc [Me2Zn(L)] (Ltetrahydrofuran, tetrahydropyran, or furan) are used without pre-reaction with oxygen for the growth of ZnO by liquid injection metal-organic (MO)CVD over the temperature range 350–550 8C. Vertically-aligned ZnO nanowires are deposited in a narrow temperature range centered on 500 8C. At other deposition temperatures, the ZnO films show continuous polycrystalline morphologies. At room temperature, the ZnO nanowires exhibit intense near band-edge photoluminescence (PL) at emission energies of 3.26 to 3.28 eV, and show minimal defect-related visible emission. Analysis of the ZnO nanowires by Auger electron spectroscopy (AES) shows that they are of high purity, with carbon not detected at an estimated detection limit of 0.5 at..

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