作者：Shimada, M.;Wang, W.-N.;Okuyama, K.;
作者單位：Department of Chemical Engineering, Graduate School of Engineering, Hiroshima University 1-4-1, Kagamiyama, Higashi-Hiroshima, Hiroshima, 739-8527, Japan;Department of Chemical Engineering, Graduate School of Engineering, Hiroshima University 1-4-1, Kagam
刊名：Chemical vapor deposition
ISSN：0948-1907
出版年：2010-01-05
卷：16
期：41005
起頁：151
止頁：156
分類號：TQ175
語種：英文
關鍵詞：Gas-phase synthesis;III-V materials;Light-emitting diode;Monodispersed particles;Semiconductor;
內容簡介Gallium nitride (GaN) nanoparticles are successfully synthesized via an improved microwave plasma-enhanced (MPE)CVD method. Optimization of the MPECVD process is achieved by manipulating the plasma operating conditions, such as antenna length, input power, and pressure. The resulting GaN nanoparticles have an average size of around 8.5nm with a very narrow size distribution, indicating that well-dispersed nanoparticles can be obtained, due to the negative charge of the particles caused by the collision of electrons in the plasma process. In addition, a satisfactory stoichiometric ratio, high crystallinity, and relatively good photoluminescence (PL) properties of the GaN nanoparticles are achieved, due to the improved process.
所需耐材幣：0
