作者：Cornuz, M.;Gr?tzel, M.;Sivula, K.;
作者單位：Institut des Sciences et Ingénierie Chimiques, ?cole Polytechnique Fédérale, Lausanne CH-1015 Lausanne, Switzerland;Institut des Sciences et Ingénierie Chimiques, ?cole Polytechnique Fédérale, Lausanne CH-1015 Lausanne, Switzerland;Institut des Sciences e
刊名：Chemical vapor deposition
ISSN：0948-1907
出版年：2010-01-05
卷：16
期：41194
起頁：291
止頁：295
分類號：TQ175
語種：英文
關(guān)鍵詞：
內(nèi)容簡介The state-of-the-art performance, obtained through the reduction of precursor gas residence time in hematite photoanodes produced by APCVD, is explained in this report by an enhanced preferential orientation of the highly conductive crystal planes perpendicular to the electron-collecting substrate.
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