作者：Pearton, S.J.;Polyakov, A.Y.;
作者單位：Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611, United States;Institute of Rare Metals, B. Tolmachevsky, 5, 119017, Moscow, Russian Federation
刊名：Chemical vapor deposition
ISSN：0948-1907
出版年：2010-01-05
卷：16
期：41194
起頁：266
止頁：274
分類號：TQ175
語種：英文
關(guān)鍵詞：Aluminum gallium nitride;Gallium nitride;Hydrogen;
內(nèi)容簡介Hydrogen is an important component of the gas-phase growth chemistry for GaN, which is typically based on NH_3 and (CH_3) _3Ga, and also the processing environment for subsequent device fabrication (e.g., SiH_4 for dielectric deposition, NH_3 or H_2 annealing ambients), and is found to readily permeate heteroepitaxial material at temperatures acircdeg C. Its main effect has been the passivation of Mg acceptors in p-GaN through the formation of neutral Mg-H complexes, which can be dissociated through minority-carrier (electron) injection or simple thermal annealing. Atomic hydrogen is also found to passivate a variety of other species in GaN, as detected by a change in the electrical or optical properties of the material. The injection of hydrogen during a large variety of device fabrication steps has been detected by secondary ion mass sprectrometry (SIMS) profiling using bsupesup H isotopic labeling. Basically all of the acceptor species in GaN, i.e., Mg, C, Ca, and Cd, are found to form complexes with hydrogen. Hydrogen plays an important role in the CVD growth of the wide bandgap GaN and AlGaN materials system and also in the subsequent processing of these semiconductors. It diffuses rapidly in these materials even at quite low temperatures and can profoundly affect the electrical properties. A review is given of the present understanding of hydrogen in the wide bandgap nitrides.
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