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In-situ growth and characterization of highly textured la _(0.9) sr0.1mno_3 films on laalo_3 (100) substrates

作者:Toro, R.G.;Malandrino, G.;Perdicaro, L.M.S.;Fiorito, D.M.R.;Andreone, A.;Lamura, G.;Fragala, I.L.;

作者單位:Dipartimento di Scienze Chimiche, Università di Catania, ISTM-CNR and INSTM, UdR Catania V.le Andrea Doria 6, 95125, Catania, Italy;Dipartimento di Scienze Chimiche, Università di Catania, ISTM-CNR and INSTM, UdR Catania V.le Andrea Doria 6, 95125, Catani

刊名:Chemical vapor deposition

ISSN:0948-1907

出版年:2010-01-05

卷:16

期:41005

起頁:143

止頁:150

分類號:TQ175

語種:英文

關鍵詞:Depth profile;Manganites;Multicomponent source;Texture;Transport properties;

內容簡介

La_(0.9)Sr0.1MnO_3 (LSMO) films are grown on LaAlO3(100) substrates second generation precursors of Sr, La, and Mn. An in-situ novel MOCVD strategy is adopted which involves the use of two different molten mixtures consisting of the La(hfa)_3 diglyme and Sr(hfa)_2 tetraglyme adducts as La and Sr sources, respectively, and Mn(hfa)_2 tmeda or Mn(tmhd)_3 as Mn precursor [Hhfa 1,1,1,5,5,5-hexafluoro-2,4- pentanedione, diglyme bis(2-methoxyethyl)ether, tetraglyme 2,5,8,11,14- pentaoxapentadecane, tmeda N,N,N0,N0-tetramethylethylendiamine and H-tmhd 2,2,6,6-tetramethyl-3,5-heptandione]. The X-ray diffraction (XRD) patterns show that the films are c-axis oriented. Pole figures are applied as a simple non-invasive tool to assess the textural nature of these LSMO films. The morphology is investigated using the scanning electron microscopy (SEM) and atomic force microscopy (AFM) that reveal the presence of grains, 300nm average dimensions, and a root mean square (rms) surface roughness of 21 nm. Chemical composition through energy-dispersive X-ray (EDX) analysis indicates that the films possess a stoichiometry of about _(0.9):0.1:1 ratio, while X-ray photoelectron spectroscopy (XPS) depth profiles are used to assess the vertical compositional homogeneity. The ferromagnetic/paramagnetic and metallic/insulating transition temperatures are determined by standard four-contact resistivity versus temperature measurements.

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