作者：Yun-Ki Byeun;Rainer Telle;Se-Hyuk Jung;Sung-Churl Choi;Hak-In Hwang;
作者單位：Institut fuer Gesteinshuettenkunde(mineral Engineering) Chair of Ceramics and Refractory materials, RWTH Aachen Mauerstrassse 5, D-52064 Aachen (Germany);Institut fuer Gesteinshuettenkunde(mineral Engineering) Chair of Ceramics and Refractory materials, R
刊名：Chemical vapor deposition
ISSN：0948-1907
出版年：2010-01-05
卷：16
期：40911
起頁：72
止頁：79
分類號：TQ175
語種：英文
關鍵詞：Aluminum nitride;Field emission;Halide vapor-phase epitaxy;VLS-VS mechanism;Arrays;
內容簡介Single-crystalline AlN nanostructures, such as thin films, nanoneedles, nanocolumns, and nanowires, depending on the controlled gas-flow ratio, are synthesized by halide vapor-phase epitaxy (HVPE). In comparison with a typical vapor/ liquid/solid (VLS) mechanism for the growth of nanowires, well-aligned AlN nanorod arrays with diameters below 20nm are grown on a catalyst-free Si substrate though a vapor/solid (VS) mechanism. Their structural and optical properties are measured by X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL). In particular, AlN nanorods exhibit an excellent field emission property with a low turn-on field of 2.25Vmm1. The field enhancement factor is estimated to be about 784 due to well-aligned, needle-shaped, AlN nanorods.
所需耐材幣：0
